High electron mobility in AlGaAs/GaAs modulation-doped structures

被引：0
|
作者：
Saku, Tadashi [1 ]
Hirayama, Yoshiro [1 ]
Horikoshi, Yoshiji [1 ]
机构：
[1] NTT Basic Research Lab, Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1991年 / 30卷 / 05期
关键词：
Electrons;
D O I：
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学科分类号：
摘要：
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页码：902 / 905
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