Complex coupled 1.55 μm DFB-lasers based on focused ion beam enhanced wet chemical etching and quantum well intermixing

被引：0

作者：

Koenig, H. ^{[1
]}

Rennon, S. ^{[1
]}

Reithmaier, J.P. ^{[1
]}

Forchel, A. ^{[1
]}

Gentner, J.-L. ^{[1
]}

Goldstein, L. ^{[1
]}

机构：

[1] Universitaet Wuerzburg, Wuerzburg, Germany

来源：

Conference Proceedings - International Conference on Indium Phosphide and Related Materials | 1999年

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D O I：

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摘要：

引用

页码：29 / 32

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[11] 1.55 MU-M STRAINED-LAYER MULTIPLE-QUANTUM-WELL DFB-LASERS WITH LOW CHIRP AND LOW DISTORTIONS FOR OPTICAL ANALOG CATV DISTRIBUTION-SYSTEMS
CEBULLA, U
BOUAYAD, J
HAISCH, H
KLENK, M
LAUBE, G
MAYER, HP
WEINMANN, R
ZIELINSKI, E
FIBER AND INTEGRATED OPTICS, 1994, 13 (03) : 241 - 245
[12] Maskless sub-μm patterning of silicon carbide using a focused ion beam in combination with wet chemical etching
Menzel, R
Bachmann, T
Wesch, W
Hobert, H
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (02): : 540 - 543
[13] Maskless sub-μm patterning of silicon carbide using a focused ion beam in combination with wet chemical etching
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1998, 16 (02):
[14] Low-chirp and high-power 1.55-μm strained-quantum-well complex-coupled DFB laser
Ministry of Transportation and, Communications, Taoyuan, Taiwan
IEEE Photonics Technol Lett, 3 (331-333):
[15] Fabrication of highly reflective gratings in 1.5 μm semiconductor lasers using focused ion beam-based etching
Cakmak, B.
Karacali, T.
Ren, Z.
Yu, S.
MICROELECTRONIC ENGINEERING, 2010, 87 (11) : 2343 - 2347
[16] Low-chirp and high-power 1.55-mu m strained quantum-well complex-coupled DFB laser
Wang, CY
Chuang, ZM
Lin, W
Tu, YK
Lee, CT
IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (03) : 331 - 333
[17] HIGH-SPEED PERFORMANCE OF PARTLY GAIN-COUPLED 1.55-MU-M STRAINED-LAYER MULTIPLE-QUANTUM-WELL DFB LASERS
LU, H
LI, GP
MAKINO, T
IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (08) : 861 - 863
[18] Complex coupled distributed-feedback and Bragg-reflector lasers for monolithic device integration based on focused-ion-beam technology
Rennon, S
Bach, L
Reithmaier, JP
Forchel, A
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2001, 7 (02) : 306 - 311
[19] HIGH-POWER 0.98-MU-M STRAINED-QUANTUM-WELL LASERS FABRICATED USING IN-SITU MONITORED REACTIVE ION-BEAM ETCHING
HAMAMOTO, K
CHIDA, H
MIYAZAKI, T
ISHIKAWA, S
IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (06) : 602 - 604
[20] LOW-THRESHOLD AND HIGH-TEMPERATURE OPERATION OF 1.55-MU-M SELF-ALIGNED RIDGE-WAVE-GUIDE MULTIPLE-QUANTUM-WELL LASERS GROWN BY CHEMICAL-BEAM EPITAXY
LIOU, KY
TSANG, WT
CHOA, FS
BURROWS, EC
RAYBON, G
BURRUS, CA
APPLIED PHYSICS LETTERS, 1991, 59 (26) : 3381 - 3383

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