Design consideration of emitter-base junction structure for InGaP/GaAs heterojunction bipolar transistor

被引：0
|
作者：
Natl Cheng-Kung Univ, Tainan, Taiwan [1 ]
机构：
来源：
Conf Optoelectron Microelectron Mater Dev Proc COMMAD | / 246-248期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
12
引用
收藏
相关论文
共 50 条
  • [21] COMPARISON OF COMPOSITIONALLY ABRUPT AND GRADED EMITTER-BASE JUNCTIONS IN THE HETEROJUNCTION BIPOLAR-TRANSISTOR
    ENQUIST, PM
    RAMBERG, LP
    EASTMAN, LF
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1844 - 1844
  • [22] BE DIFFUSION AT THE EMITTER-BASE JUNCTION OF GRADED ALINAS/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    METZGER, RA
    HAFIZI, M
    WILSON, RG
    STANCHINA, WE
    JENSEN, JF
    MCCRAY, LG
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06): : 2347 - 2350
  • [23] EMITTER-BASE BANDGAP GRADING EFFECTS ON GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    YOSHIDA, J
    KURATA, M
    OBARA, M
    MORIZUKA, K
    MASHITA, M
    HOJO, A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1979 - 1979
  • [24] EFFECT OF CARRIER RECOMBINATION AT THE EMITTER-BASE HETEROJUNCTION ON THE PERFORMANCE OF GAINP/GAAS AND ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    LU, ZH
    MAJERFELD, A
    YANG, LW
    WRIGHT, PD
    COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 629 - 632
  • [25] InGaP/GaAs Superlattice-Emitter and GaAsBi Base Heterojunction Bipolar Transistor with High Current-Gain Linearity
    Wu, Yi-Chen
    Tsai, Jung-Hui
    Liou, Syuan-Hao
    Lin, Pao-Sheng
    Chen, Yu-Chi
    Chiang, Te-Kuang
    SCIENCE OF ADVANCED MATERIALS, 2018, 10 (05) : 651 - 654
  • [26] Device operation of InGaN heterojunction bipolar transistors with a graded emitter-base design
    Chung, T
    Limb, J
    Yoo, D
    Ryou, JH
    Lee, W
    Shen, SC
    Dupuis, RD
    Chu-Kung, B
    Feng, M
    Keogh, DM
    Asbeck, PM
    APPLIED PHYSICS LETTERS, 2006, 88 (18)
  • [27] COMPARISON OF COMPOSITIONALLY GRADED TO ABRUPT EMITTER-BASE JUNCTIONS USED IN THE HETEROJUNCTION BIPOLAR-TRANSISTOR
    ENQUIST, PM
    RAMBERG, LP
    EASTMAN, LF
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) : 2663 - 2669
  • [28] Simulated analysis for InGaP/GaAs heterostructure-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure
    Tsai, Jung-Hui
    Hsu, I-Hsuan
    Weng, Tzu-Yen
    Li, Chien-Ming
    MICROELECTRONICS JOURNAL, 2007, 38 (6-7) : 750 - 753
  • [29] An enhanced model for InGaP/GaAs heterojunction bipolar transistor
    Shi, Yuxia
    Wang, Yan
    MICROELECTRONICS JOURNAL, 2013, 44 (02) : 163 - 168
  • [30] EFFECT OF EMITTER-BASE SPACING ON THE CURRENT GAIN OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    LEE, WS
    UEDA, D
    MA, T
    PAO, YC
    HARRIS, JS
    IEEE ELECTRON DEVICE LETTERS, 1989, 10 (05) : 200 - 202
12345