INFLUENCE OF IMPURITIES ON THE ENERGY OF STACKING FAULTS IN GALLIUM ARSENIDE.

被引：0
|
作者：
Astakhov, V.M.
Vadil'eva, L.F.
Sidorov, Yu.G.
Stenin, S.I.
机构：
来源：
Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela) | 1980年 / 22卷 / 02期
关键词：
SEMICONDUCTING GERMANIUM;
D O I：
暂无
中图分类号：
TM2 [电工材料]; TN [电子技术、通信技术];
学科分类号：
0805 ; 080502 ; 080801 ; 0809 ;
摘要：
An investigation was made of the influence of doping with group II, IV, and VI elements on the energy of stacking faults in epitaxial gallium arsenide films. The stacking fault energy gamma was estimated by a method involving an analysis of microtwins in an inhomogeneous stress field. The method was first tested by application to Ge and pure GaAs, for which gamma was calculated from the dislocation splitting. The stacking fault energy was determined for GaAs doped with Te. Estimates were obtained of the distribution of impurities near the stacking fault plane, and these indicated a strong enrichment of the faults with tellurium and tin.
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页码：279 / 282
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