DETERMINATION OF SLOW SURFACE STATES IN SEMICONDUCTORS BY A SURFACE ACOUSTIC WAVE TECHNIQUE.

被引：0
|
作者：
Baudrand, H. [1 ]
Taha, T.E. [1 ]
Ahmadpanah, M. [1 ]
机构：
[1] Ecole Natl Superieure, d'Electrotechnique d'Electronique,, d'Informatique et d'Hydraulique,, Ecole Natl Superieure d'Electrotechnique d'Electronique, d'Informatique et d'Hydraulique, Toulouse,
来源：
International Journal of Electronics | 1986年 / 61卷 / 05期
关键词：
ACOUSTIC SURFACE WAVE DEVICES - SEMICONDUCTOR DEVICES;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The surface impedance transformation concept is used to describe the attenuation of a surface acoustic wave (SAW) in the presence of a charged semiconductor surface. The slow surface state charges of the untreated semiconductor surface are deduced from a comparison of the theoretical and experimental results.
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页码：569 / 573
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