DETERMINATION OF SLOW SURFACE STATES IN SEMICONDUCTORS BY A SURFACE ACOUSTIC WAVE TECHNIQUE.

被引：0

作者：

Baudrand, H. ^{[1
]}

Taha, T.E. ^{[1
]}

Ahmadpanah, M. ^{[1
]}

机构：

[1] Ecole Natl Superieure, d'Electrotechnique d'Electronique,, d'Informatique et d'Hydraulique,, Ecole Natl Superieure d'Electrotechnique d'Electronique, d'Informatique et d'Hydraulique, Toulouse,

来源：

International Journal of Electronics | 1986年 / 61卷 / 05期

关键词：

ACOUSTIC SURFACE WAVE DEVICES - SEMICONDUCTOR DEVICES;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The surface impedance transformation concept is used to describe the attenuation of a surface acoustic wave (SAW) in the presence of a charged semiconductor surface. The slow surface state charges of the untreated semiconductor surface are deduced from a comparison of the theoretical and experimental results.

引用

页码：569 / 573

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