PERFORMANCE AND PRODUCIBILITY OF THE GaAs PERMEABLE BASE TRANSISTOR.

被引：0
|
作者：
Murphy, R.Allen [1 ]
Murphy, James D. [1 ]
机构：
[1] MIT, Lexington, MA, USA, MIT, Lexington, MA, USA
来源：
Microwave journal | 1987年 / 30卷 / 07期
关键词：
SEMICONDUCTING GALLIUM ARSENIDE - Applications - SEMICONDUCTOR DEVICE MANUFACTURE - SEMICONDUCTOR DEVICES - Performance;
D O I：
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中图分类号：
学科分类号：
摘要：
The structure of the permeable-base transistor (PBT) is described, and its advantages are enumerated. The PBT fabrication process is examined, and contamination and material purity factors are discussed. Some PBT performance results are presented. Refs.
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页码：101 / 116
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