MILLIMETRE-WAVE FREQUENCY DOUBLERS USING GaAs MESFETS.

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作者
Evans, D.H.
机构
来源
Annual Review - Philips Research Laboratories | 1986年
关键词
GALLIUM ARSENIDE MESFETS - MILLIMETER-WAVE FREQUENCY DOUBLERS;
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摘要
When it is used as a frequency doubler, the GaAs MESFET will give a second harmonic conversion gain of typically 6 db less than its fundamental. Consequently a device with a realizable fmax of 50 GHz should give a 0 db conversion gain at about 25 GHz. Therefore the combination of a Ku-band FET oscillator plus a FET frequency doubler having a few dbs conversion loss should be capable of producing more power than a fundamental Ka-band oscillator. This article describes the performance of a pair of 15 to 30 GHz balanced frequency doublers. Both use the same 0. 3 mu m gate-length devices though the MESFETs in each are operated under differing conditions in an attempt to establish the best conditions for harmonic generation.
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页码:108 / 110
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