Influence of V/III molar ratio on deep traps in metalorganic chemical vapor deposition grown InAlAs layers

被引：0
|
作者：
机构：
[1] Naritsuka, Shigeya
[2] Noda, Takao
[3] Wagai, Aki
[4] Fujita, Shinobu
[5] Ashizawa, Yasuo
来源：
Naritsuka, Shigeya | 1600年 / 32期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] EFFECTS OF V III RATIO ON ZN ELECTRICAL-ACTIVITY IN ZN-DOPED INGAALP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    NISHIKAWA, Y
    SUGAWARA, H
    ISHIKAWA, M
    KOKUBUN, Y
    JOURNAL OF CRYSTAL GROWTH, 1991, 108 (3-4) : 728 - 732
  • [32] The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD
    Durkaya, G.
    Buegler, M.
    Atalay, R.
    Senevirathna, I.
    Alevli, M.
    Hitzemann, O.
    Kaiser, M.
    Kirste, R.
    Hoffmann, A.
    Dietz, N.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (06): : 1379 - 1382
  • [33] ZnBeSe epitaxy layers grown by photo-assisted metalorganic chemical vapor deposition
    Zhang, JY
    Shen, DZ
    Fan, XW
    Yang, BJ
    Zheng, ZH
    JOURNAL OF CRYSTAL GROWTH, 2000, 214 : 100 - 103
  • [34] Electron traps in metalorganic chemical vapor deposition grown Al0.2Ga0.8As
    Ajjel, R
    Bouzrara, L
    Zaïdi, MA
    Maaref, H
    Brémond, G
    PHYSICA B-CONDENSED MATTER, 2003, 327 (01) : 15 - 19
  • [35] INTERFACE CHARACTERIZATION OF (IN,GA)AS/ALGAAS LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    KIM, J
    ALWAN, JJ
    COLEMAN, JJ
    WAYMAN, CM
    MATERIALS LETTERS, 1991, 11 (5-7) : 151 - 154
  • [36] CARBON AND HYDROGEN INCORPORATION IN ZNTE LAYERS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    DUMONT, H
    SVOB, L
    BALLUTAUD, D
    GOROCHOV, O
    JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (02) : 239 - 242
  • [37] InP grown on Si substrates with GaP buffer layers by metalorganic chemical vapor deposition
    Kohama, Yoshitaka, 1600, (28):
  • [38] III-V HETEROSTRUCTURE INTERFACES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    COLEMAN, JJ
    COSTRINI, G
    JENG, SJ
    WAYMAN, CM
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 428 - 431
  • [39] Laplace deep level transient spectroscopy of electron traps in epitaxial metalorganic chemical vapor deposition grown n-GaSb
    Venter, A.
    Botha, J. R.
    Wagener, V.
    Murape, D. M.
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (02)
  • [40] Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition
    Mita, S.
    Collazo, R.
    Rice, A.
    Dalmau, R. F.
    Sitar, Z.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (01)
12345