Electrical properties of Au/Bn/InP MIS diodes

被引：0

|

作者：

Baehr, O.

Barrada, M.

Bath, A.

Lepley, B.

Thevenin, P.

Schoonman, J.

机构：

来源：

Journal of Non-Crystalline Solids | 1995年 / 187卷

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

收藏

相关论文

共 50 条

[21] TEMPERATURE-DEPENDENCE OF THE ELECTRICAL CHARACTERISTICS IN AU-N-TYPE INP SCHOTTKY DIODES
HATTORI, K
YAMASAKI, T
URAOKA, Y
FUJII, T
JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 7020 - 7024
[22] CHARACTERISTICS OF INP MIS SCHOTTKY DIODES PREPARED BY PLASMA OXIDATION
IMAI, Y
ISHIBASHI, T
IDA, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) : 221 - 224
[23] Electrical characterization of the Au/InP(100) and Au/InSb/InP(100) structures
Akkal, B
Benamara, Z
Bideux, L
Gruzza, B
MICROELECTRONICS JOURNAL, 1999, 30 (07) : 673 - 678
[24] MIS DIODES ON N-INP HAVING AN IMPROVED INTERFACE
SHI, ZQ
ANDERSON, WA
SOLID-STATE ELECTRONICS, 1991, 34 (03) : 285 - 289
[25] CHANGE IN CAPACITANCE OF INP MIS DIODES CAUSED BY THE PIEZOELECTRIC EFFECT
KUSAKA, M
HIRAI, M
OKAZAKI, S
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 80 (01): : K25 - K28
[26] ELECTRICAL CHARACTERISTICS OF GAAS MIS SCHOTTKY DIODES
ASHOK, S
BORREGO, JM
GUTMANN, RJ
SOLID-STATE ELECTRONICS, 1979, 22 (07) : 621 - 631
[27] Comparative study of the electrical properties of Au/n-Si(MS) and Au/Si3N4 /n-Si(MIS) Schottky diodes
Adem Tataroglu
Chinese Physics B, 2013, (06) : 631 - 636
[28] Comparative study of the electrical properties of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes
Tataroglu, Adem
CHINESE PHYSICS B, 2013, 22 (06)
[29] Influence of rapid thermal annealing on electrical and structural properties of double metal structure Au/Ni/n-InP (111) diodes
Reddy, M. Bhaskar
Janardhanam, V.
Kumar, A. Ashok
Reddy, V. Rajagopal
Reddy, P. Narasimha
CURRENT APPLIED PHYSICS, 2010, 10 (02) : 687 - 692
[30] Electrical and photoelectric properties of Au-SiC Schottky barrier diodes
Kosyachenko, LA
Sklyarchuk, VM
Sklyarchuk, YF
SOLID-STATE ELECTRONICS, 1998, 42 (01) : 145 - 151

← 1 2 3 4 5 →