Synthesis and characterization of thin films of Bi4Ti3O12 from oxide precursors

被引：0
|
作者：
Univ. Federal de São Carlos, Departamento de Física, Grupo de Ceramicas Ferroeletricas, Caixa Postal 676, 13565-670 São Carlos SP, Brazil [1 ]
机构：
来源：
J Phys D | / 9卷 / 957-960期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Preparation and characterization of highly c-axis-oriented Bi4Ti3O12 thin films
    Yamaguchi, M
    Kawanabe, K
    Nagatomo, T
    Omoto, O
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 41 (01): : 138 - 142
  • [32] SINTERING AND CHARACTERIZATION OF BI4TI3O12 CERAMICS
    JOVALEKIC, C
    ATANASOSKA, L
    PETROVIC, V
    RISTIC, MM
    JOURNAL OF MATERIALS SCIENCE, 1991, 26 (13) : 3553 - 3564
  • [33] Synthesis and characteristics of Na-doped Bi4Ti3O12 thin films on Si substrate
    Wang, Z
    Yang, CH
    Yu, XY
    Yu, T
    JOURNAL OF CRYSTAL GROWTH, 2005, 280 (3-4) : 557 - 561
  • [34] Large memory window in the vanadium doped Bi4Ti3O12 thin films
    Chen, Kai-Huang
    Chang, Chia-Hsiung
    Cheng, Chien-Min
    Yang, Cheng-Fu
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 97 (04): : 919 - 923
  • [35] Effects of lanthanide dopants on the ferroelectric property of Bi4Ti3O12 thin films
    So, YW
    Kang, BS
    Seo, SA
    Kim, DJ
    Noh, TW
    Yoon, JG
    FERROELECTRICS, 2002, 271 : 1937 - 1942
  • [36] Photoelectric effects in chemical solution deposited Bi4Ti3O12 thin films
    Pintilie, L
    Alexe, M
    Pignolet, A
    Hesse, D
    JOURNAL DE PHYSIQUE IV, 1998, 8 (P9): : 101 - 104
  • [37] The influence of crystallization route on the properties of lanthanum-doped Bi4Ti3O12 thin films prepared from polymeric precursors
    Simoes, AZ
    Riccardi, CS
    Quinelato, C
    Ries, A
    Longo, E
    Varela, JA
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 113 (03): : 207 - 214
  • [38] Ferroelectric thin films for Bi4Ti3O12 prepared by APMOCVD and their physical properties
    1600, High Technology Letters, Beijing, China (05):
  • [39] Piezoelectric properties of Bi4Ti3O12 thin films annealed in different atmospheres
    Simoes, A. Z.
    Riccardi, C. S.
    Gonzalez, A. H. M.
    Ries, A.
    Longo, E.
    Varela, J. A.
    MATERIALS RESEARCH BULLETIN, 2007, 42 (05) : 967 - 974
  • [40] Switching kinetics of neodymium-modified Bi4Ti3O12 thin films
    Li, W
    Bao, P
    Lu, XM
    Zhu, JS
    Wang, YN
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (20) : L29 - L33
12345