CHARACTERISTICS OF THE ABSORPTION NEAR THE FUNDAMENTAL BAND EDGE OF NARROW-GAP CdxHg1 - xTe.

被引:0
|
作者
Saginov, L.D.
Ponomarenko, V.P.
Fedirko, V.A.
Stafeev, V.I.
机构
来源
Soviet physics. Semiconductors | 1982年 / 16卷 / 03期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
12
引用
收藏
页码:298 / 300
相关论文
共 50 条
  • [31] EXCESS CURRENTS IN NARROW GAP CDXHG1-XTE P-N-JUNCTIONS
    BAZHENOV, NL
    GASANOV, SI
    IVANOVOMSKII, VI
    INFRARED PHYSICS, 1993, 34 (01): : 37 - 41
  • [32] Electron scattering on the short-range potential in narrow gap CdxHg1-xTe
    Malyk, OP
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 129 (1-3): : 161 - 171
  • [33] Narrow gap HgCdTe absorption behavior near the band edge including nonparabolicity and the Urbach tail
    Chang, Yong
    Grein, Christoph H.
    Sivananthan, Sivalingam
    Flatte, M. E.
    Nathan, V.
    Guha, S.
    APPLIED PHYSICS LETTERS, 2006, 89 (06)
  • [34] INVESTIGATION OF ELECTROPHYSICAL PARAMETERS OF THE SPACE-CHARGE REGION IN NARROW-GAP CDXHG1-XTE SEMICONDUCTORS BY THE FIELD-EFFECT METHOD IN AN ELECTROLYTE
    PEREPELKIN, AD
    YAFYASOV, AM
    BOZHEVOLNOV, VB
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (01): : 92 - 94
  • [35] PROPERTIES OF NARROW-GAP SOLID SOLUTIONS OF NEAR INFRARED BAND OPTOELECTRONIC DEVICES
    Blagin, A. V.
    Nefedova, N. A.
    Nefedov, V. V.
    PROCEEDINGS OF THE INTERNATIONAL CONFERENCE "ACTUAL ISSUES OF MECHANICAL ENGINEERING" (AIME 2018), 2018, 157 : 95 - 99
  • [36] Direct observation of a narrow band near the gap edge of FeSi
    Park, C.-H.
    Shen, Z.-X.
    Loeser, A. G.
    Dessau, D. S.
    Physical Review B: Condensed Matter, 1995, 52 (24):
  • [37] Direct observation of a narrow band near the gap edge of FeSi
    Park, CH
    Shen, ZX
    Loeser, AG
    Dessau, DS
    Mandrus, DG
    Migliori, A
    Sarrao, J
    Fisk, Z
    PHYSICAL REVIEW B, 1995, 52 (24): : 16981 - 16984
  • [38] ELECTRICAL AND RECOMBINATION CHARACTERISTICS OF CdxHg1 - xTe IRRADIATED WITH ELECTRONS AT T equals 300 degree K.
    Brudnyi, V.N.
    Voitsekhovskii, A.V.
    Grechukh, Z.G.
    Krivov, M.A.
    Lilenko, Yu.V.
    Limarenko, L.N.
    Pashkovskii, M.V.
    Petrov, A.S.
    Potapov, A.I.
    1977, 11 (08): : 905 - 907
  • [39] Optical transitions in CdxHg1 − xTe-based quantum wells and their analysis with account for the actual band structure of the material
    N. L. Bazhenov
    A. V. Shilyaev
    K. D. Mynbaev
    G. G. Zegrya
    Semiconductors, 2012, 46 : 773 - 778
  • [40] BAND-EDGE DISCONTINUITIES AND INTERFACE POTENTIAL STEP IN THE 3-BAND NARROW-GAP APPROACH
    DETCHEVA, V
    KANDILAROV, BD
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 96 (02): : 877 - 882