CHARACTERISTICS OF THE ABSORPTION NEAR THE FUNDAMENTAL BAND EDGE OF NARROW-GAP CdxHg1 - xTe.

被引:0
|
作者
Saginov, L.D.
Ponomarenko, V.P.
Fedirko, V.A.
Stafeev, V.I.
机构
来源
Soviet physics. Semiconductors | 1982年 / 16卷 / 03期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
12
引用
收藏
页码:298 / 300
相关论文
共 50 条
  • [1] CHARACTERISTICS OF THE ABSORPTION NEAR THE FUNDAMENTAL-BAND EDGE OF NARROW-GAP CDXHG1-XTE
    SAGINOV, LD
    PONOMARENKO, VP
    FEDIRKO, VA
    STAFEEV, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (03): : 298 - 300
  • [2] Ion Implantation in Narrow-Gap CdxHg1–xTe Solid Solutions
    N. Kh. Talipov
    A. V. Voitsekhovskii
    Russian Physics Journal, 2018, 61 : 1005 - 1023
  • [3] MICROHARDNESS AND POLARITY IN CdxHG1 - xTe.
    Barbot, J.F.
    Rivaud, G.
    Desoyer, J.C.
    Journal of Materials Science, 1988, 231 (05) : 1655 - 1659
  • [4] QUANTUM OSCILLATIONS OF THE mu PHOTOCONDUCTIVITY IN CdxHg1 - xTe.
    Golukbev, V.G.
    Ivano-Omskii, V.I.
    Kropotov, G.I.
    Soviet Technical Physics Letters (English Translation of Pis'ma v Zhurnal Tekhnicheskoi Fiziki), 1977, 3 (06): : 216 - 217
  • [5] Temperature dependence of the carrier lifetime in narrow-gap CdxHg1–xTe solid solutions: Radiative recombination
    N. L. Bazhenov
    K. D. Mynbaev
    G. G. Zegrya
    Semiconductors, 2015, 49 : 1170 - 1175
  • [6] Effect of Gaussian Spreading on the Photoconductivity Spectrum of CdxHg1 - xTe.
    Vishnyakov, E.M.
    Kurbanov, K.R.
    Yakimenko, A.D.
    Yatsenko, O.B.
    Zlomanov, V.P.
    Neorganiceskie materialy, 1980, 16 (06): : 991 - 993
  • [7] Temperature dependence of the carrier lifetime in CdxHg1 − xTe narrow-gap solid solutions with consideration for Auger processes
    N. L. Bazhenov
    K. D. Mynbaev
    G. G. Zegrya
    Semiconductors, 2015, 49 : 432 - 436
  • [8] Specific features of the temperature dependence of the conduction electron concentration in the narrow-gap and zero-gap states of CdxHg1 − xTe
    S. A. Aliev
    E. I. Zulfigarov
    R. I. Selim-zade
    Semiconductors, 2012, 46 : 293 - 297
  • [9] SPONTANEOUS AND STIMULATED RADIATION DUE TO BOUND EXCITONS IN CdxHg1 - xTe.
    Ivanov-Omskii, V.I.
    Kurbanov, K.R.
    Rustamov, R.B.
    Smirnov, V.A.
    Yuldashev, Sh.U.
    Soviet physics. Semiconductors, 1984, 18 (08): : 944 - 945
  • [10] SOME CHARACTERISTICS OF THE LOW-TEMPERATURE CONDUCTIVITY OF p-TYPE CdxHg1 - xTe.
    Elizarov, A.I.
    Ivanov-Omskii, V.I.
    Soviet physics. Semiconductors, 1981, 15 (05): : 531 - 533