High-power and high-efficiency 1.3μm InAsP compressively-strained MQW lasers at high temperatures

被引：0
|
作者：
Oohashi, H. [1 ]
Seki, S. [1 ]
Hirono, T. [1 ]
Sugiura, H. [1 ]
Amano, T. [1 ]
Ueki, M. [1 ]
Nakano, J. [1 ]
Yamamoto, M. [1 ]
Tohmori, Y. [1 ]
Fukuda, M. [1 ]
Yokoyama, K. [1 ]
机构：
[1] NTT Opto-electronics Lab, Kanagawa, Japan
来源：
Electronics Letters | 1995年 / 31卷 / 07期
关键词：
641.1 Thermodynamics - 701.1 Electricity: Basic Concepts and Phenomena - 712.1.2 Compound Semiconducting Materials - 714.2 Semiconductor Devices and Integrated Circuits - 744.4.1 Semiconductor Lasers;
D O I：
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学科分类号：
摘要：
8
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页码：556 / 557
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