FIELD EFFECT IN AN n-GaAs METAL-ANODIC OXIDE-FILM JUNCTION.

被引：0
|
作者：
Tikhov, S.V. [1 ]
Karpovich, I.A. [1 ]
Martynov, V.V. [1 ]
Funina, G.V. [1 ]
机构：
[1] Lobachevskii State Univ, Gorki, USSR, Lobachevskii State Univ, Gorki, USSR
来源：
Soviet physics journal | 1986年 / 29卷 / 04期
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D O I：
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摘要：
TRANSISTORS, FIELD EFFECT
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页码：304 / 307
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