Monolithic Integrated Pair of Field-Effect Transistors with Controlling p-n Junction.

被引：0
|
作者：
Voronov, S.A.
Kozlov, Yu.G.
Ozhogin, M.A.
机构：
来源：
Izvestiya Vysshikh Uchebnykh Zavedenij. Radioelektronika | 1976年 / 19卷 / 12期
关键词：
INTEGRATED CIRCUITS; MONOLITHIC; -; Manufacture;
D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
The principal steps associated with the manufacture of a monolithic pair of field-effect transistors with a controlling p-n junction are considered. Important parameters of the obtained devices are tabulated and discussed.
引用
收藏
页码：75 / 77
相关论文
共 50 条
  • [41] Theory and Calculation of the Phase Modulation Bridge by Means of the Capacitance of the p-n Junction.
    Shakhmaev, M.M.
    Trefilov, A.L.
    Izvestiya Vysshikh Uchebnykh Zavedenij. Radioelektronika, 1975, 18 (05): : 37 - 41
  • [42] Fabrication of Graphene p-n Junction Field Effect Transistors on Patterned Self-Assembled Monolayers/Substrate
    Cho, Jumi
    Jung, Daesung
    Kim, Yooseok
    Song, Wooseok
    Adhikari, Prashanta Dhoj
    An, Ki-Seok
    Park, Chong-Yun
    APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY, 2015, 24 (03): : 53 - 59
  • [43] THE PHOTOMAGNETIC EFFECT IN A P-N JUNCTION
    KIKOIN, IK
    NIKOLAEV, IN
    SOVIET PHYSICS JETP-USSR, 1962, 14 (05): : 1203 - 1205
  • [44] SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p-n diodes
    Tetzner, Kornelius
    Egbo, Kingsley
    Klupsch, Michael
    Unger, Ralph-Stephan
    Popp, Andreas
    Chou, Ta-Shun
    Bin Anooz, Saud
    Galazka, Zbigniew
    Trampert, Achim
    Bierwagen, Oliver
    Wuerfl, Joachim
    APPLIED PHYSICS LETTERS, 2022, 120 (11)
  • [45] Application of the phase-field model to p-n junction. Comparison with the conventional sharp-interface model
    Popov, DI
    SEVENTH INTERNATIONAL WORKSHOP ON NONDESTRUCTIVE TESTING AND COMPUTER SIMULATIONS IN SCIENCE AND ENGINEERING, 2004, 5400 : 20 - 23
  • [46] Black Phosphorus-Zinc Oxide Nanomaterial Heterojunction for p-n Diode and Junction Field-Effect Transistor
    Jeon, Pyo Jin
    Lee, Young Tack
    Lim, June Yeong
    Kim, Jin Sung
    Hwang, Do Kyung
    Im, Seongil
    NANO LETTERS, 2016, 16 (02) : 1293 - 1298
  • [47] Formation of p-n junction with stable p-doping in graphene field effect transistors using deep UV irradiation
    Iqbal, M. Z.
    Siddique, Salma
    Iqbal, M. W.
    Eom, Jonghwa
    JOURNAL OF MATERIALS CHEMISTRY C, 2013, 1 (18) : 3078 - 3083
  • [48] INTERPRETATION OF ALPHA-VALUES IN P-N JUNCTION TRANSISTORS
    GOUCHER, FS
    PRINCE, MB
    PHYSICAL REVIEW, 1953, 89 (03): : 651 - 653
  • [49] Photosensitive Graphene P-N Junction Transistors and Ternary Inverters
    Kim, Jun Beom
    Li, Jinshu
    Choi, Yongsuk
    Whang, Dongmok
    Hwang, Euyheon
    Cho, Jeong Ho
    ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (15) : 12897 - 12903
  • [50] DC CHARACTERISTICS OF JUNCTION GATE FIELD-EFFECT TRANSISTORS
    HALLADAY, HE
    VANDERZI.A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (06) : 531 - &
12345