共 50 条
- [31] Growth of undoped and Te doped InSb crystals by vertical directional solidification technique Bulletin of Materials Science, 1998, 21 : 127 - 131
- [33] NATURE OF DEFECTS IN HEAVILY TE-DOPED GAAS REVUE DE PHYSIQUE APPLIQUEE, 1983, 18 (08): : 475 - 478
- [34] Photothermal and optical characterization of Te-doped GaSb JOURNAL DE PHYSIQUE IV, 2005, 125 : 371 - 374
- [35] COMPLEXING AT THE GAS EPITAXY OF TE-DOPED GAAS IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1985, 28 (02): : 96 - 100
- [36] PHOTOLUMINESCENCE OF TE-DOPED GALLIUM ANTIMONIDE CRYSTALS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 84 (02): : 541 - 545
- [38] COMPLEXING AT THE GAS EPITAXY OF TE-DOPED GAAS IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1986, 29 (10): : 118 - 119
- [39] Bound exciton luminescence in Te-doped SrS JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) : 3676 - 3683