X-RAY TOPOGRAPHIC OBSERVATION OF SINGLE DISLOCATION MOBILITY IN SILICON.

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作者
George, A.
Escaravage, C.
Schroeter, W.
Champier, G.
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来源
Crystal Lattice Defects | 1973年 / 4卷 / 01期
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摘要
SILICON AND ALLOYS
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页码:29 / 36
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