X-RAY TOPOGRAPHIC OBSERVATION OF SINGLE DISLOCATION MOBILITY IN SILICON.

被引：0
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作者：
George, A.
Escaravage, C.
Schroeter, W.
Champier, G.
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来源：
Crystal Lattice Defects | 1973年 / 4卷 / 01期
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Compendex;
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摘要：
SILICON AND ALLOYS
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页码：29 / 36
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