Effects of doping Al into SiO2 on electroluminescence from Au/nanometer (SiO2/Si/SiO2)/p-Si structure

被引:0
|
作者
Wang, S.T. [1 ]
Chen, Y. [1 ]
Zhang, B.R. [1 ]
Qiao, Y.P. [1 ]
Qin, G.G. [1 ]
Ma, Z.C. [1 ]
Zong, W.H. [1 ]
机构
[1] Dept. of Physics, Peking Univ., Beijing 100871, China
关键词
Luminescence center - Nanometer silicon;
D O I
暂无
中图分类号
学科分类号
摘要
(Edited Abstract)
引用
收藏
页码:161 / 165
相关论文
共 50 条
  • [31] Electroluminesence from Au/(SiO2/Si/SiO2) nanoscale double-barrier/n+-Si structure
    Sun, YK
    Heng, CL
    Wang, ST
    Qin, GG
    Ma, ZC
    Zong, WH
    ACTA PHYSICA SINICA, 2000, 49 (07) : 1404 - 1408
  • [32] Electroluminescence in Si/SiO2 layer structures
    Heikkilä, L
    Kuusela, T
    Hedman, HP
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (04) : 2179 - 2184
  • [33] Electroluminescence from amorphous Si/SiO2 superlattices
    Qin, GG
    Ma, SY
    Ma, ZC
    Zong, WH
    You, LP
    SOLID STATE COMMUNICATIONS, 1998, 106 (06) : 329 - 333
  • [34] Photoluminescence of Si/SiO2 and SiNx/SiO2 multilayers
    Institute of Solid State Physics, School of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610068, China
    不详
    Bandaoti Guangdian, 2007, 5 (680-684):
  • [35] Structure of PbTe(SiO2)/SiO2 multilayers deposited on Si(111)
    Kellermann, Guinther
    Rodriguez, Eugenio
    Jimenez, Ernesto
    Cesar, Carlos Lenz
    Barbosa, Luiz Carlos
    Craievich, Aldo Felix
    JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2010, 43 : 385 - 393
  • [36] Photoelectric effect on an Al/SiO2/p-Si Schottky diode structure
    Saloma, E.
    Alcantara, S.
    Hernandez-Como, N.
    Villanueva-Cab, J.
    Chavez, M.
    Perez-Luna, G.
    Alvarado, J.
    MATERIALS RESEARCH EXPRESS, 2020, 7 (10)
  • [37] Nanometer scale modifications of Si/Sio2 and Si/Sio2/polymer surfaces by scanning tunneling microscope
    Nabiullin, I. R.
    Kornilov, V. M.
    Lachinov, A. N.
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2007, 468 : 609 - 615
  • [38] OntheVoltageandFrequencyDistributionofDielectricPropertiesandacElectricalConductivityinAl/SiO2/p-Si(MOS)Capacitors
    Ahmet Kaya
    Semsettin Altmdal
    Yasemin Safak Asar
    Zekayi Snmez
    Chinese Physics Letters, 2013, 30 (01) : 169 - 172
  • [39] Electroluminescence afterglow from indium tin oxide/Si-rich SiO2/p-Si structure
    Wang Xiao-Xin
    Zhang Jian-Guo
    Cheng Bu-Wen
    Yu Jin-Zhong
    Wang Qi-Ming
    CHINESE PHYSICS LETTERS, 2006, 23 (05) : 1306 - 1309
  • [40] SI/SIO2 INTERFACE STRUCTURES IN LASER-RECRYSTALLIZED SI ON SIO2
    OGURA, A
    AIZAKI, N
    APPLIED PHYSICS LETTERS, 1989, 55 (06) : 547 - 549