(001)-oriented lead selenide films grown on silicon substrates

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作者：
Inst of Semiconductor Physics of the, Ukrainian Acad of Sciences, Kiev, Ukraine [1 ]
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来源：
Infrared Physics and Technology | 1996年 / 37卷 / 03期
关键词：
Band structure - Crystal orientation - Electric properties - Epitaxial growth - Film growth - Photoelectricity - Photosensitivity - Semiconducting lead compounds - Semiconducting silicon - Structure (composition) - Substrates - Thermal effects;
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页码：379 / 384
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