Influence of annealing on the interface properties of low-dose Si implanted n-layers in semi-insulating InP

被引:0
|
作者
Molnar, B.
机构
来源
Journal of Applied Physics | 1995年 / 77卷 / 09期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] EFFECT OF MELT STOICHIOMETRY ON ELECTRICAL ACTIVATION UNIFORMITY OF SI-IMPLANTED LAYERS IN UNDOPED SEMI-INSULATING GAAS
    SATO, T
    TERASHIMA, K
    EMORI, H
    OZAWA, S
    NAKAJIMA, M
    FUKUDA, T
    ISHIDA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07): : L488 - L490
  • [32] Influence of the annealing duration on the interface roughness and electrical properties of low-dose SIMOX wafers
    Munteanu, D
    Guilhalmenc, C
    Cristoloveanu, S
    Moriceau, H
    Cartier, AM
    Aspar, B
    PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1997, 97 (23): : 131 - 136
  • [33] ELECTRICAL-PROPERTIES OF FE-DOPED SEMI-INSULATING INP AFTER PROTON-BOMBARDMENT AND ANNEALING
    WOODHOUSE, JD
    DONNELLY, JP
    ISELER, GW
    SOLID-STATE ELECTRONICS, 1988, 31 (01) : 13 - 16
  • [34] Influence of high-temperature annealing on the properties of Fe doped semi-insulating GaN structures
    Polyakov, AY
    Smirnov, NB
    Govorkov, AV
    Shlensky, AA
    Pearton, SJ
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (10) : 5591 - 5596
  • [35] Influence of high-temperature annealing on the properties of Fe doped semi-insulating GaN structures
    Polyakov, A.Y., 1600, American Institute of Physics Inc. (95):
  • [36] Semi-insulating behaviour of n-type lightly Fe-doped InP wafers after thermal annealing
    Fornari, R
    Zappettini, A
    Gombia, E
    Mosca, R
    Curti, M
    Chearkaoui, K
    Marrakchi, G
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 292 - 295
  • [37] MOCVD regrowth of semi-insulating InP and p-n junction blocking layers around laser active stripes
    Bertone, D
    Bricconi, A
    Fang, RY
    Greborio, L
    Magnetti, G
    Meliga, M
    Paoletti, R
    JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) : 715 - 718
  • [38] Towards semi-insulating InGaAsP/InP layers by post-growth processing using Fe ion implantation and rapid thermal annealing
    Fekecs, Andre
    Chicoine, Martin
    Ilahi, Bouraoui
    Schiettekatte, Francois
    Charette, Paul G.
    Ares, Richard
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 46 (16)
  • [40] Si-SiO2 interface formation in low-dose low-energy separation by implanted oxygen materials
    Jutarosaga, T
    Manne, S
    Seraphin, S
    APPLIED SURFACE SCIENCE, 2005, 250 (1-4) : 168 - 181