共 50 条
- [31] EFFECT OF MELT STOICHIOMETRY ON ELECTRICAL ACTIVATION UNIFORMITY OF SI-IMPLANTED LAYERS IN UNDOPED SEMI-INSULATING GAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07): : L488 - L490
- [32] Influence of the annealing duration on the interface roughness and electrical properties of low-dose SIMOX wafers PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1997, 97 (23): : 131 - 136
- [35] Influence of high-temperature annealing on the properties of Fe doped semi-insulating GaN structures Polyakov, A.Y., 1600, American Institute of Physics Inc. (95):
- [36] Semi-insulating behaviour of n-type lightly Fe-doped InP wafers after thermal annealing 1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 292 - 295