Photoreflectance and photoluminescence study of direct-and indirect-gap band lineups of GaAsP/GaP strained quantum wells

被引：0
|
作者：
机构：
来源：
| 1600年 / Japan Society of Applied Physics卷 / IEEE期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Correlation between electronic states and optical properties in indirect GaAsP/GaP quantum wells with insertion of an ultrathin AlP layer
    Arimoto, K
    Usami, N
    Shiraki, Y
    PHYSICA E, 2000, 8 (04): : 323 - 327
  • [32] Photoreflectance study of direct-gap interband transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers
    Hsu, H. P.
    Wu, P. H.
    Huang, Y. S.
    Chrastina, D.
    Isella, G.
    von Kaenel, H.
    Tiong, K. K.
    APPLIED PHYSICS LETTERS, 2012, 100 (04)
  • [33] Direct-gap reduction and valence-band splitting of ordered indirect-gap AlInP2 studied by dark-field spectroscopy
    Schubert, M.
    Rheinlaender, B.
    Franke, E.
    Pietzonka, I.
    Physical Review B: Condensed Matter, 54 (24):
  • [34] Direct-gap reduction and valence-band splitting of ordered indirect-gap AlInP2 studied by dark-field spectroscopy
    Schubert, M
    Rheinlander, B
    Franke, E
    Pietzonka, I
    Skriniarova, J
    Gottschalch, V
    PHYSICAL REVIEW B, 1996, 54 (24): : 17616 - 17619
  • [35] Efficient Excitonic Photoluminescence in Direct and Indirect Band Gap Mono layer MoS2
    Steinhoff, A.
    Kim, J. -H.
    Jahnke, F.
    Roesner, M.
    Kim, D. -S.
    Lee, C.
    Han, G. H.
    Jeong, M. S.
    Wehling, T. O.
    Gies, C.
    NANO LETTERS, 2015, 15 (10) : 6841 - 6847
  • [36] Theory of polarized photoluminescence of indirect band gap excitons in type-I quantum dots
    Smirnov, D. S.
    Ivchenko, E. L.
    PHYSICAL REVIEW B, 2023, 108 (19)
  • [37] Band structures and optical gain of strained GaAsxP1-x-yNy/GaP quantum wells
    Zhu, Yuan-Hui
    Yu, Hong-Yu
    Fan, Wei-Jun
    APPLIED PHYSICS LETTERS, 2011, 98 (12)
  • [38] Effects of swift heavy ion irradiation on band gap of strained AlGaN/GaN Multi Quantum Wells
    Devaraju, G.
    Sathish, N.
    Pathak, A. P.
    Turos, A.
    Bazzan, M.
    Trave, E.
    Mazzoldi, P.
    Arora, B. M.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 268 (19): : 3001 - 3004
  • [39] THEORY OF NORMAL-INCIDENCE ABSORPTION FOR THE INTERSUBBAND TRANSITION IN N-TYPE INDIRECT-GAP SEMICONDUCTOR QUANTUM-WELLS
    XU, WL
    FU, Y
    WILLANDER, M
    SHEN, SC
    PHYSICAL REVIEW B, 1994, 49 (19): : 13760 - 13766
  • [40] Theoretical study of Intersubband Absorption Coefficient of Conduction Band in GaAsP/GaP Quantum Well Structures
    Lynda, Chenini
    Abdelkader, Aissat
    Jean-Pierre, Vilcot
    2019 5TH INTERNATIONAL CONFERENCE ON POWER GENERATION SYSTEMS AND RENEWABLE ENERGY TECHNOLOGIES (PGSRET-2019), 2019, : 272 - 275
12345