共 50 条
- [4] EVIDENCE FOR A PIEZOELECTRIC EFFECT IN COHERENTLY STRAINED GE0.2SI0.8 ALLOYS ON SI(001) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 744 - 744
- [7] Effect of strained-Si layer thickness on dislocation distribution and SiGe relaxation in strained-Si/SiGe heterostructures Journal of Applied Physics, 2008, 104 (07):
- [9] Diffusion of phosphorus in strained Si/SiGe/Si heterostructures SI FRONT-END PROCESSING-PHYSICS AND TECHNOLOGY OF DOPANT-DEFECT INTERACTIONS, 1999, 568 : 271 - 276
- [10] The effect of SiGe barriers on the thermal stability of highly B-doped Si surface layers NOVEL MATERIALS AND PROCESSES FOR ADVANCED CMOS, 2003, 745 : 87 - 92