ON THE QUALITY OF CONTACTS IN a-Si:H STAGGERED ELECTRODE THIN-FILM TRANSISTORS.

被引：0
|
作者：
Schropp, Ruud E.I. [1 ]
Veltkamp, Joost W.C. [1 ]
Snijder, Jan [1 ]
Verwey, Jan F. [1 ]
机构：
[1] Univ of Groningen, Dep of Applied Physics, Neth, Univ of Groningen, Dep of Applied Physics, Neth
来源：
IEEE Transactions on Electron Devices | 1985年 / ED-32卷 / 09期
关键词：
FIELD-EFFECT (FE) MEASUREMENTS - RESIDUAL SERIES RESISTANCE - STAGGERED ELECTRODE STRUCTURES - THIN-FILM TRANSISTORS (TFT);
D O I：
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摘要：
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页码：1757 / 1760
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