Realization of nanopillars on GaAs quantum well structure grown by molecular beam epitaxy

被引:0
|
作者
Nanofabrication Facility, Dept. Elec. Eng., Indian Inst. T., Chennai, India [1 ]
机构
来源
Microelectron J | / 9卷 / 899-903期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] 1.3 μm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy
    Liu, PW
    Liao, GH
    Lin, HH
    ELECTRONICS LETTERS, 2004, 40 (03) : 177 - 179
  • [22] Long-wavelength InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy
    Wei, YQ
    Wang, SM
    Wang, XD
    Zhao, QX
    Sadeghi, M
    Tångring, I
    Larsson, A
    JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 747 - 750
  • [23] Highly strained InGaAs/GaAs single-Quantum-Well lasers grown by molecular beam epitaxy
    Pan, Zhong
    Li, Lian-He
    Xu, Ying-Qiang
    Du, Yun
    Lin, Yao-Wang
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2001, 22 (09): : 1097 - 1101
  • [24] InAsSb quantum dots grown on GaAs substrates by molecular beam epitaxy
    Kudo, M
    Nakaoka, T
    Iwamoto, S
    Arakawa, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (1-7): : L45 - L47
  • [25] InAsSb quantum dots grown on GaAs substrates by molecular beam epitaxy
    Kudo, Makoto
    Nakaoka, Toshihiro
    Iwamoto, Satoshi
    Arakawa, Yasuhiko
    Jpn J Appl Phys Part 2 Letter, 1-7 (L45-L47):
  • [26] Optical properties of InGaAs/GaAs multi quantum wells structure grown by molecular beam epitaxy
    Alias, Mohd Sharizal
    Maulud, Mohd Fauzi
    Suomalainen, Soile
    Yahya, Mohd Razman
    Mat, Abdul Fatah Awang
    SAINS MALAYSIANA, 2008, 37 (03): : 245 - 248
  • [27] QUANTUM WELL INJECTION LASERS GROWN BY MOLECULAR BEAM EPITAXY.
    Woodbridge, K.
    Blood, P.
    Fletcher, E.D.
    Hulyer, P.J.
    Annual Review - Philips Research Laboratories, 1983, : 50 - 51
  • [28] Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing
    Makhloufi, Hajer
    Boonpeng, Poonyasiri
    Mazzucato, Simone
    Nicolai, Julien
    Arnoult, Alexandre
    Hungria, Teresa
    Lacoste, Guy
    Gatel, Christophe
    Ponchet, Anne
    Carrere, Helene
    Marie, Xavier
    Fontaine, Chantal
    NANOSCALE RESEARCH LETTERS, 2014, 9
  • [29] Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing
    Hajer Makhloufi
    Poonyasiri Boonpeng
    Simone Mazzucato
    Julien Nicolai
    Alexandre Arnoult
    Teresa Hungria
    Guy Lacoste
    Christophe Gatel
    Anne Ponchet
    Hélène Carrère
    Xavier Marie
    Chantal Fontaine
    Nanoscale Research Letters, 9
  • [30] Characterization of the GaN/GaAs/GaN structure grown by molecular beam epitaxy
    Kim, H
    Andersson, TG
    Chauveau, JM
    Trampert, A
    SOLID-STATE ELECTRONICS, 2003, 47 (03) : 539 - 542