MATERIAL SURFACES MODIFIED BY ION IMPLANTATION.

被引：0
|
作者：
Iwaki, Masaya
机构：
来源：
| 1600年 / 32期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] COLORATION OF LiNbO3 BY METAL ION IMPLANTATION.
    Saito, Yukinori
    Suganomata, Shinji
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (11): : 1941 - 1942
  • [42] Ureteral implantation.
    Aboutaieb, R
    Rabii, R
    Joual, A
    ElMrini, M
    Benjelloun, S
    ANNALES D UROLOGIE, 1996, 30 (05) : 240 - 243
  • [43] ION-BEAM ANALYSIS OF STEEL SURFACES MODIFIED BY NITROGEN ION-IMPLANTATION
    NEELMEIJER, C
    GROTZSCHEL, R
    HENTSCHEL, E
    KLABES, R
    KOLITSCH, A
    RICHTER, E
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 66 (1-2): : 242 - 249
  • [44] Nanometric cutting of single crystal silicon surfaces modified by ion implantation
    Fang, F. Z.
    Chen, Y. H.
    Zhang, X. D.
    Hu, X. T.
    Zhang, G. X.
    CIRP ANNALS-MANUFACTURING TECHNOLOGY, 2011, 60 (01) : 527 - 530
  • [45] Surface Modification of Polyhydroxyalkanoates by Ion Implantation. Characterization and Cytocompatibility Improvement
    Xiaoyun Chen
    Xiongfei Zhang
    Ya Zhu
    Jizhong Zhang
    Ping Hu
    Polymer Journal, 2003, 35 : 148 - 154
  • [46] MODIFICATION OF SURFACE PROPERTIES OF YTTRIA STABILIZED ZIRCONIA BY ION IMPLANTATION.
    Legg, K.O.
    Cochran Jr., J.K.
    Solnick-Legg, H.F.
    Mann, X.L.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1985, B7-8 (pt 2) : 535 - 540
  • [47] FORMATION OF WAVEGUIDES AND MODULATORS IN LiNbO3 BY ION IMPLANTATION.
    Destefanis, G.L.
    Gailliard, J.P.
    Ligeon, E.L.
    Valette, S.
    Farmery, B.W.
    Townsend, P.D.
    Perez, A.
    1600, (50):
  • [48] Surface modification of polyhydroxyalkanoates by ion implantation. Characterization and cytocompatibility improvement
    Chen, XY
    Zhang, XF
    Zhu, Y
    Zhang, JZ
    Hu, P
    POLYMER JOURNAL, 2003, 35 (02) : 148 - 154
  • [49] FABRICATION OF THIN LAYERS OF SILICON OXIDES (NITRIDES) BY ION IMPLANTATION.
    Anon
    IBM technical disclosure bulletin, 1985, 28 (01):
  • [50] MOS Transistor with Built-in Channel Produced by Ion Implantation.
    Kozlov, Yu.G.
    Ozhogin, M.A.
    Izvestiya Vysshikh Uchebnykh Zavedenij. Radioelektronika, 1974, 17 (12): : 98 - 100
12345