共 50 条
- [41] X-ray diffraction investigation into the specific features of the growth kinetics of oxygen-containing precipitates in Czochralski-grown silicon crystalsPhysics of the Solid State, 2007, 49 : 215 - 219N. N. NovikovP. A. Tesel’koO. V. Mikhalyuk
- [42] Defects in Czochralski-grown silicon crystals investigated by positron annihilation Ikari, Atsushi, 1600, JJAP, Minato-ku, Japan (33):
- [43] INFRARED STUDY OF OXYGEN PRECIPITATES IN CZOCHRALSKI GROWN SILICONJOURNAL OF APPLIED PHYSICS, 1991, 69 (10) : 7251 - 7255BORGHESI, AGEDDO, MPIVAC, B
- [44] Distribution of SiO2 precipitates in large, oxygen rich Czochralski-grown silicon single crystals after annealing at 750 °C 1600, American Inst of Physics, Woodbury, NY, USA (77):
- [45] Defects in Czochralski-grown silicon crystals investigated by positron annihilationApplied Surface Science, 1995, 85 (1-4): : 253 - 258Ikari, Atsushi
- [46] X-ray diffraction investigation into the specific features of the growth kinetics of oxygen-containing precipitates in Czochralski-grown silicon crystalsPHYSICS OF THE SOLID STATE, 2007, 49 (02) : 215 - 219Novikov, N. N.Tesel'ko, P. A.Mikhalyuk, O. V.
- [47] THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALSJOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 516 - 525MATSUSHITA, Y
- [48] Influence of metallic impurities on oxygen precipitation in Czochralski-grown siliconPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1997, 18 (02): : 118 - 123Shen, BoYang, KaiZhang, XuyuShi, HongtaoZhong, RongShi, YiZheng, YoudouSekiguchi, T.Sumino, S.
- [49] A GAMMA-RAY AND SMALL-ANGLE NEUTRON-SCATTERING STUDY OF OXYGEN PRECIPITATION IN SILICON SINGLE-CRYSTALSPHILOSOPHICAL MAGAZINE LETTERS, 1988, 58 (04) : 183 - 188KINDER, SHMESSOLORAS, SSTEWART, RJ