Effect of surface termination on the electronic states in nanocrystalline porous silicon

被引：0
|
作者：
Matsumoto, Takahiro [1 ]
Arata, Goh [1 ]
Nair, Selvakumar V. [1 ]
Masumoto, Yasuaki [1 ]
机构：
[1] Japan Science and Technology Corp, Tsukuba, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 1 B期
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摘要：
10
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页码：589 / 592
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