CONDUCTION-DRIFT INDUCED BY ELECTRICAL FIELD IN a-Si:H FILMS.

被引:0
|
作者
Xiong Shaozhen
Sun Zhonglin
机构
来源
| 1600年 / 04期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Frequency-resolved drift mobility in a-Si:H
    Hattori, K
    Hirao, T
    Iida, M
    Okamoto, H
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 : 352 - 356
  • [32] Dependence of electrical conductance of a-Si:H films on Na concentration in glass substrate
    Pantchev, B
    Danesh, P
    Kreissig, U
    Schmidt, B
    OPTO-ELECTRONICS REVIEW, 2001, 9 (04) : 431 - 434
  • [33] Electrical characteristics of fluorine implanted a-Si:H thin films at high fields
    Ke, N
    Wong, SP
    Peng, SQ
    Lin, SH
    MATERIALS CHEMISTRY AND PHYSICS, 1996, 46 (01) : 93 - 95
  • [35] Electrical and photoelectric properties of a-Si:H layered films:: The influence of thermal annealing
    Kurova, IA
    Ormont, NN
    Terukov, EI
    Trapeznikova, IN
    Afanas'ev, VP
    Gudovskikh, AS
    SEMICONDUCTORS, 2001, 35 (03) : 353 - 356
  • [36] Electrical and photoelectric properties of a-Si:H layered films: The influence of thermal annealing
    I. A. Kurova
    N. N. Ormont
    E. I. Terukov
    I. N. Trapeznikova
    V. P. Afanas’ev
    A. S. Gudovskikh
    Semiconductors, 2001, 35 : 353 - 356
  • [37] Photoconductivity of thin a-Si:H films
    A. G. Kazanskiĭ
    O. G. Koshelev
    A. Yu. Sazonov
    A. A. Khomich
    Semiconductors, 2008, 42 (2) : 192 - 194
  • [38] Photoconductivity of thin a-Si:H films
    Kazanskii, A. G.
    Koshelev, O. G.
    Sazonov, A. Yu.
    Khomich, A. A.
    SEMICONDUCTORS, 2008, 42 (02) : 192 - 194
  • [39] The Effects of Phosphorus Doping in the a-Si:H and a-SiN:H on the Electrical Characteristics of a-Si:H TFT
    Lee, Sang-Kwon
    Ji, Jung-Hwan
    Son, Won-Ho
    Choi, Sie-Young
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2012, 563 : 26 - 35
  • [40] Study on electrical properties of crystallized a-Si:H films by Ar+ laser
    Zhang, Xiangdong
    Huang, Xinfan
    Chen, Kunji
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1992, 13 (01): : 36 - 41