Effect of biaxial stress on the solid phase epitaxial crystallization of GexSi(1-x) films

被引：0
|
作者：
Univ of Modena, Modena, Italy [1 ]
机构：
来源：
Jpn J Appl Phys Part 2 Letter | / 3 B卷 / L339-L342期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] EFFECT OF PHASE COMPOSITION AND CONDENSATION TEMPERATURE ON CONDUCTIVITY TYPE OF FILMS OF (SNTE)1-X(PBSE)X
    FREIK, DM
    GALUSHCHAK, MA
    BELEI, MI
    GAIDUCHOK, GM
    INORGANIC MATERIALS, 1976, 12 (01) : 102 - 104
  • [22] THE EFFECT OF STRESS ON PHASE FORMATION IN EPITAXIAL THIN-FILMS
    JOHNSON, WC
    JOURNAL OF METALS, 1987, 39 (10): : A8 - A8
  • [23] Fabrication of epitaxial GexSi1-x layers by ion implantation
    Elliman, R.G.
    Wong, W.C.
    Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1993, 80-81 (pt 2):
  • [24] TETRAGONAL AND MONOCLINIC FORMS OF GEXSI1-X EPITAXIAL LAYERS
    EAGLESHAM, DJ
    MAHER, DM
    FRASER, HL
    HUMPHREYS, CJ
    BEAN, JC
    APPLIED PHYSICS LETTERS, 1989, 54 (03) : 222 - 224
  • [25] Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)1-x(ZnSe)x with Nanocrystals
    Saidov, A. S.
    Usmonov, Sh. N.
    Saparov, D. V.
    ADVANCES IN MATERIALS SCIENCE AND ENGINEERING, 2019, 2019
  • [26] Amorphous GexSi1-x and GexSi1-xOy thin films for uncooled microbolometers
    Rana, MM
    Butler, DP
    INFRARED TECHNOLOGY AND APPLICATIONS XXXI, PTS 1 AND 2, 2005, 5783 : 597 - 606
  • [27] Stress and interface morphology contributions in the crystallization kinetics of a GexSi1-x thin layer on (100)Si
    Corni, F
    Frabboni, S
    Tonini, R
    Ottaviani, G
    Queirolo, G
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (07) : 3528 - 3533
  • [28] Crystallization kinetics in (AgSbTe)x(In1-ySby)1-x films used in optical data storage
    Mongia, G
    Bhatnagar, PK
    JOURNAL OF MATERIALS SCIENCE, 2006, 41 (08) : 2477 - 2482
  • [29] Magnetron sputter deposition of (SiC)1-x(AlN)x solid solution films
    Guseinov, MK
    Kurbanov, MK
    Safaraliev, GK
    Bilalov, BA
    TECHNICAL PHYSICS LETTERS, 2005, 31 (02) : 138 - 139
  • [30] Atomic and electronic structure of a dissociated 60° misfit dislocation in GexSi(1-x)
    Batson, PE
    PHYSICAL REVIEW LETTERS, 1999, 83 (21) : 4409 - 4412
12345