Single event upset immunity of strontium bismuth tantalate ferroelectric memories

被引：0
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作者：
Benedetto, J.M. [1 ]
Derbenwick, G.F. [1 ]
Cuchiaro, J.D. [1 ]
机构：
[1] UTMC Microelectronic Systems, Colorado Springs, United States
来源：
IEEE Transactions on Nuclear Science | 1999年 / 46卷 / 6 I期
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页码：1421 / 1426
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