Degradation of low-noise microwave gallium arsenide Schottky-barrier field-effect transistors due to high-power impulse microwave interference

被引：0
|
作者：
Antipin, V.V.
Godovitsyn, V.A.
Gromov, D.V.
Ravayev, A.A.
机构：
来源：
Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika) | 1993年 / 48卷 / 10期
关键词：
Current voltage characteristics - Degradation - Electric current measurement - Electromagnetic wave interference - Gates (transistor) - Pulse generators - Semiconducting gallium arsenide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The behavior of typical low-noise GaAs microwave Schottky-barrier field-effect transistors when acted upon by high-power impulse microwave interference for different levels of incident power is considered. A method of carrying out experiments using a magnetron microwave radio-pulse generator is described.
引用
收藏
页码：87 / 90
相关论文
共 50 条
  • [31] Low-Frequency Noise in Schottky-Barrier-Based Nanoscale Field-Effect Transistors
    Clement, Nicolas
    Larrieu, Guilhem
    Dubois, Emmanuel
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (01) : 180 - 187
  • [32] Analysis and design of microwave amplifiers based on field-effect transistors with a Schottky barrier using nonlinear criteria
    Dmitriev, V.D.
    Brunev, A.I.
    Korotaev, V.M.
    Radioelectronics and Communications Systems (English translation of Izvestiya Vysshikh Uchebnykh Zavedenii Radioelektronika), 1988, 31 (07): : 75 - 78
  • [33] THE CHANGE IN THE PARAMETERS OF A LOW-NOISE AMPLIFIER DUE TO THE ACTION OF HIGH-POWER PULSED INTERFERENCE
    ANTIPIN, VV
    GODOVITSYN, VA
    GROMOV, DV
    KOZHEVNIKOV, AO
    RAVAYEV, AA
    TELECOMMUNICATIONS AND RADIO ENGINEERING, 1991, 46 (09) : 66 - 68
  • [34] LOW-NOISE GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTOR-AMPLIFIER FOR 4-GHZ RADIO
    KNERR, RH
    SWAN, CB
    BELL SYSTEM TECHNICAL JOURNAL, 1978, 57 (03): : 479 - 490
  • [35] Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications
    Khan, MA
    Simin, G
    Yang, JW
    Zhang, JP
    Koudymov, A
    Shur, MS
    Gaska, R
    Hu, XH
    Tarakji, A
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2003, 51 (02) : 624 - 633
  • [36] High-Performance Schottky-Barrier Field-Effect Transistors Based on Monolayer SiC Contacting Different Metals
    Xie, Hai-Qing
    Li, Jie-Ying
    Liu, Gang
    Cai, Xi-Ya
    Fan, Zhi-Qiang
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (12) : 5111 - 5116
  • [37] Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications
    Balandin, A
    Morozov, SV
    Cai, S
    Li, R
    Wang, KL
    Wijeratne, G
    Viswanathan, CR
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1999, 47 (08) : 1413 - 1417
  • [38] HIGH-POWER FIELD-EFFECT TRANSISTORS IN LOW- AND HIGH-FREQUENCY POWER AMPLIFIERS.
    D'yakonov, V.P.
    Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika), 1982, 36-37 (09): : 55 - 63
  • [39] Use of high-purity AlxGa1-xAs layers in epitaxial structures for high-power microwave field-effect transistors
    Zhuravlev, KS
    Toropov, AI
    Shamirzaev, TS
    Bazarov, AK
    Rakov, YN
    Myakishev, YB
    TECHNICAL PHYSICS LETTERS, 1999, 25 (08) : 595 - 597
  • [40] Use of high-purity AlxGa1−xas layers in epitaxial structures for high-power microwave field-effect transistors
    K. S. Zhuravlev
    A. I. Toropov
    T. S. Shamirzaev
    A. K. Bazarov
    Yu. N. Rakov
    Yu. B. Myakishev
    Technical Physics Letters, 1999, 25 : 595 - 597
12345