Evaluation of radiation damage on electrical characteristics of SiO2 due to reactive ion etching

被引：0
|
作者：
Tsukamoto, Akira [1 ]
Mizushima, Kazuvoshi [1 ]
Hidaka, Yoshiharu [1 ]
Okada, Hiroyuki [1 ]
Terakawa, Sumio [1 ]
机构：
[1] Matsushita Electronics Corp, Kyoto, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 6 B期
关键词：
Silica;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：3058 / 3062
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