Location control of crystal Si grain followed by excimer-laser melting of Si thin-films

被引：0
|
作者：
Ishihara, Ryoichi [1 ]
van der Wilt, Paul Ch. [1 ]
机构：
[1] Delft Univ of Technology, Delft, Netherlands
来源：
| 1998年 / JJAP, Tokyo, Japan卷 / 37期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Melting and resolidification dynamics of a-Si and poly-Si thin films during excimer laser annealing
    Hatano, M
    Moon, S
    Lee, M
    Suzuki, K
    Grigoropoulos, CP
    FLAT-PANEL DISPLAYS AND SENSORS: PRINCIPLES, MATERIALS AND PROCESSES, 2000, 558 : 193 - 198
  • [22] Numerical analysis of excimer-laser-induced melting and solidification of thin Si films
    Gupta, VV
    Song, HJ
    Im, JS
    APPLIED PHYSICS LETTERS, 1997, 71 (01) : 99 - 101
  • [23] Grain matrix made with excimer-laser crystallization of thin silicon films
    van der Wilt, PC
    Ishihara, R
    SOLID STATE PHENOMENA, 1999, 67-8 : 169 - 173
  • [24] Grain matrix made with excimer-laser crystallization of thin silicon films
    Van Der Wilt, P.Ch.
    Ishihara, R.
    Solid State Phenomena, 1999, 67 : 169 - 173
  • [25] Modeling and experimental analysis in excimer-laser crystallization of a-Si films
    Chen, Yu-Ru
    Chang, Chien-Hung
    Chao, Long-Sun
    JOURNAL OF CRYSTAL GROWTH, 2007, 303 (01) : 199 - 202
  • [26] Non-equilibrium two-dimensional model of excimer-laser melting and solidification of thin Si films on SiO2
    Gupta, VV
    Song, HJ
    Im, JS
    ADVANCED LASER PROCESSING OF MATERIALS - FUNDAMENTALS AND APPLICATIONS, 1996, 397 : 465 - 470
  • [27] PREPARATION OF SI1-XGEX THIN CRYSTALLINE FILMS BY PULSED EXCIMER-LASER ANNEALING OF HEAVILY GE IMPLANTED SI
    REPPLINGER, F
    FOGARASSY, E
    GROB, A
    GROB, JJ
    MULLER, D
    PREVOT, B
    STOQUERT, JP
    DEUNAMUNO, S
    THIN SOLID FILMS, 1994, 241 (1-2) : 155 - 158
  • [28] Location control of crystal grains in excimer laser crystallization of silicon thin films for single-grain TFTs
    Kumomi, H
    Wakiyama, H
    Nakagawa, G
    Makihira, K
    Asano, T
    AMORPHOUS AND NANOCRYSTALLINE SILICON SCIENCE AND TECHNOLOGY- 2004, 2004, 808 : 277 - 282
  • [29] Location control of crystal grains in excimer laser crystallization of silicon thin films
    Kumomi, H
    APPLIED PHYSICS LETTERS, 2003, 83 (03) : 434 - 436
  • [30] LATERAL GRAIN-GROWTH OF POLY-SI FILMS WITH A SPECIFIC ORIENTATION BY AN EXCIMER-LASER ANNEALING METHOD
    KURIYAMA, H
    NOHDA, T
    ISHIDA, S
    KUWAHARA, T
    NOGUCHI, S
    KIYAMA, S
    TSUDA, S
    NAKANO, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (12B): : 6190 - 6195
12345