Observation of graded interfaces in strained Si/Si1-xGex layers (0.17<x<0.23) using photoreflectance

被引：0
|
作者：
Univ of Surrey, Surrey, United Kingdom [1 ]
机构：
来源：
Appl Surf Sci | / 1卷 / 1-5期
关键词：
Electron transitions - Reflection - Semiconducting silicon - Semiconducting silicon compounds;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] EFFECTS OF SI THERMAL-OXIDATION ON B DIFFUSION IN SI AND STRAINED SI1-XGEX LAYERS
    KUO, P
    HOYT, JL
    GIBBONS, JF
    TURNER, JE
    LEFFORGE, D
    APPLIED PHYSICS LETTERS, 1995, 67 (05) : 706 - 708
  • [32] Calculation of the intrinsic carrier concentration of strained Si1-xGex layers
    College of Physics and Telecommunication, South China Normal University, Guangzhou 510006, China
    Guti Dianzixue Yanjiu Yu Jinzhan, 2007, 4 (449-451+467):
  • [33] Confirmation of proton beam bending in graded Si1-xGex/Si layers using ion channeling
    de Kerckhove, DG
    Breese, MBH
    Smulders, PJM
    Jamieson, DN
    APPLIED PHYSICS LETTERS, 1999, 74 (02) : 227 - 229
  • [34] Bending MeV proton beams in graded composition Si1-xGex/Si layers
    Breese, MBH
    de Kerckhove, DG
    Smulders, PJM
    Bik, WMA
    Boerma, DO
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 171 (03): : 387 - 400
  • [35] High electron mobility in strained Si channel of Si1-xGex/Si/Si1-xGex heterostructure with abrupt interface
    Sugii, N
    Nakagawa, K
    Kimura, Y
    Yamaguchi, S
    Miyao, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (8A) : A140 - A142
  • [36] AN ANALYSIS OF PHASE-SHIFTS IN PHOTOREFLECTANCE SPECTRA OF STRAINED SI/SI1-XGEX STRUCTURES FOR X-LESS-THAN-0.24
    HOSEA, TJC
    HALL, DJ
    CARLINE, RT
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (08) : 5084 - 5089
  • [37] Hole mobility of strained Si/(001)Si1-xGex
    WANG XiaoYan1
    2 Department of Electron and Electricity Engineering
    Science China(Physics,Mechanics & Astronomy), 2012, Mechanics & Astronomy)2012 (01) : 48 - 54
  • [38] Electron mobility of strained Si/(001) Si1-xGex
    Wang Xiao-Yan
    Zhang He-Ming
    Song Jian-Jun
    Ma Jian-Li
    Wang Guan-Yu
    An Jiu-Hua
    ACTA PHYSICA SINICA, 2011, 60 (07)
  • [39] RELAXATION OF SI/SI1-XGEX STRAINED LAYER STRUCTURES
    GIBBINGS, CJ
    TUPPEN, CG
    HALLIWELL, MAG
    HOCKLY, M
    DAVEY, ST
    LYONS, MH
    HETEROSTRUCTURES ON SILICON : ONE STEP FURTHER WITH SILICON, 1989, 160 : 121 - 128
  • [40] Study of Si1-xGex/Si/Si1-xGex heterostructures with abrupt interfaces for ultrahigh mobility FETs
    Sugii, N
    Nakagawa, K
    Yamaguchi, S
    Miyao, M
    III-V AND IV-IV MATERIALS AND PROCESSING CHALLENGES FOR HIGHLY INTEGRATED MICROELECTRONICS AND OPTOELECTRONICS, 1999, 535 : 269 - 274
12345