VT GENERATOR.

被引：0
|
作者：
Viswanathan, T.R. [1 ]
Nagaraj, K. [1 ]
机构：
[1] Univ of Waterloo, Waterloo, Ont, Can, Univ of Waterloo, Waterloo, Ont, Can
来源：
Canadian electrical engineering journal | 1986年 / 11卷 / 02期
关键词：
ELECTRONIC CIRCUITS; POWER SUPPLY - SEMICONDUCTOR DEVICES; MOSFET;
D O I：
10.1109/CEEJ.1986.6593750
中图分类号：
学科分类号：
摘要：
In MOS circuits, there is a need to generate a voltage equal to the threshold voltage V//r of the MOSFETs and a current equal to KV//T**2 (where K is the conduction parameter of a MOSFET) for the purposes of supply-independent biasing and temperature compensation. A circuit which generates these quantities is presented in this paper.
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页码：87 / 88
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