Electrical properties of LiNbO3 thin films by RF magnetron sputtering and bias sputtering

被引：0
|
作者：
Nishida, Takashi [1 ]
Shimizu, Masaru [1 ]
Horiuchi, Toshihisa [1 ]
Shiosaki, Tadashi [1 ]
Matsushige, Kazumi [1 ]
机构：
[1] Kyoto Univ, Kyoto, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 9 B期
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摘要：
9
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页码：5113 / 5115
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