CW LASER ANNEALING OF POLYCRYSTALLINE SILICON ON SIO2 ANDEFFECTS OF SUCCESSIVE FURNACE ANNEALING.

被引:0
|
作者
KUGIMIYA, KOICHI
FUSE, GENSHU
INOUE, KAORU
机构
来源
| 1982年 / V 21卷 / N 1期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
7
引用
收藏
页码:19 / 21
相关论文
共 50 条
  • [21] Synthesis of silicon nanocrystals in silicon-rich SiO2 by rapid CO2 laser annealing
    Lin, CJ
    Lin, GR
    Chueh, YL
    Chou, LJ
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2005, 8 (12) : D43 - D45
  • [22] The effect of annealing on the electroluminescence of SiO2 layers with excess silicon
    A. P. Baraban
    D. V. Egorov
    Yu. V. Petrov
    L. V. Miloglyadova
    Technical Physics Letters, 2004, 30 : 85 - 87
  • [23] The effect of annealing on the electroluminescence of SiO2 layers with excess silicon
    Baraban, AP
    Egorov, DV
    Petrov, YV
    Miloglyadova, LV
    TECHNICAL PHYSICS LETTERS, 2004, 30 (02) : 85 - 87
  • [24] Resistivity of heavily doped polycrystalline silicon subjected to furnace annealing
    Suzuki, Kunihiro
    Miyata, Noriyuki
    Kawamura, Kazuo
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (4 A): : 1748 - 1752
  • [25] POLYCRYSTALLINE SILICON RECRYSTALLIZATION BY COMBINED CW LASER AND FURNACE HEATING
    SHAPPIR, J
    ADAR, R
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (04) : 902 - 905
  • [26] RESISTIVITY REDUCTION IN HEAVILY DOPED POLYCRYSTALLINE SILICON USING CW-LASER AND PULSED-LASER ANNEALING
    SHIBATA, T
    LEE, KF
    GIBBONS, JF
    MAGEE, TJ
    PENG, J
    HONG, JD
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3625 - 3632
  • [27] Annealing of the Co/Hf bilayer on single Si, polycrystalline Si and SiO2
    Kim, ET
    Kwon, Y
    Lee, C
    JOURNAL OF NEUROSCIENCE METHODS, 2000, 100 (1-2) : 17 - 23
  • [28] INTRODUCTION OF DEFECTS IN ION-IMPLANTED SILICON DURING LASER ANNEALING.
    Bao Ximao
    Hang Xinfan
    Guo He
    Zhang Mei
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1983, 4 (06): : 596 - 600
  • [29] Fe-RELATED DEFECT CENTERS IN Si RESULTING FROM cw LASER ANNEALING.
    Sheng, N.H.
    Merz, J.L.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 116 B&C (1-3): : 553 - 557
  • [30] RESISTIVITY REDUCTION OF POLYCRYSTALLINE SILICON FILM BY LASER ANNEALING
    ONGA, S
    KOHYAMA, S
    SHIBATA, K
    NAGAKUBO, Y
    IIZUKA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 133 - 138