共 50 条
- [22] Growth of GaN on thin Si {111} layers bonded to Si {100} substrates III-V AND IV-IV MATERIALS AND PROCESSING CHALLENGES FOR HIGHLY INTEGRATED MICROELECTRONICS AND OPTOELECTRONICS, 1999, 535 : 101 - 106
- [24] Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111) Semiconductors, 2020, 54 : 1424 - 1429
- [29] Ellipsometric study on the interface of Pt-Si system Guangxue Xuebao/Acta Optica Sinica, 1988, 8 (10): : 877 - 883
- [30] Void shapes in the Si(111) substrate at the heteroepitaxial thin film Si interface SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 521 - 524