Pt/Si(111) interface and the properties of thin Pt layers on Si

被引:0
|
作者
Morgen, P.
Jorgensen, B.
Gordon, J.
机构
来源
Physica Scripta T | 1994年 / T54卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] THE PT/SI(111) INTERFACE AND THE PROPERTIES OF THIN PT LAYERS ON SI
    MORGEN, P
    JORGENSEN, B
    GORDON, J
    PHYSICA SCRIPTA, 1994, 54 : 278 - 282
  • [2] FORMATION OF THE PT-SI(111) INTERFACE
    MORGEN, P
    SZYMONSKI, M
    ONSGAARD, J
    JORGENSEN, B
    ROSSI, G
    SURFACE SCIENCE, 1988, 197 (03) : 347 - 362
  • [3] Effect of hydrogenation on Pt/Si and Pt/silicide/Si interface
    Ding, Sunan
    Xu, Zhengjia
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1994, 15 (06): : 367 - 372
  • [4] Effect of H chemisorption on properties of Pt/Si interface
    Xu, Guoding
    Zhang, Tao
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1992, 13 (12): : 750 - 755
  • [5] REACTIVE INTERFACE FORMATION-PT/SI(111) - NUCLEATION AND MORPHOLOGY
    NEMANICH, RJ
    DOLAND, CM
    PONCE, FA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1039 - 1043
  • [6] Interface reaction of Pt-(111)Si with the substrate at 450°C
    Chen, Jiann-Ruey
    Chang, Li-Di
    Yeh, Fon-Shan
    Vacuum, 1990, 41 (4 -6 Pt2) : 1261 - 1263
  • [8] Growth and structure of thin Pt2Si and PtSi layers on Si(111) and (001) characterized with in situ grazing incidence diffraction
    Kumpf, C
    Nicula, R
    Burkel, E
    JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1997, 30 : 1016 - 1021
  • [9] X-RAY PHOTOELECTRON-SPECTROSCOPY OF SI PT AND PT SI LAYERS ON GAAS
    KURODA, T
    IWAKURO, H
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (03) : 1486 - 1488
  • [10] IN-DIFFUSION OF PT IN SI FROM THE PTSI/SI INTERFACE
    MANTOVANI, S
    NAVA, F
    NOBILI, C
    OTTAVIANI, G
    PHYSICAL REVIEW B, 1986, 33 (08): : 5536 - 5544