BEHAVIOR OF IMPLANTED ARSENIC DURING RAPID THERMAL ANNEALING OF Ti AND Si.

被引：0

作者：

Ponpon, J.P. ^{[1
]}

Saulnier, A. ^{[1
]}

Stuck, R. ^{[1
]}

机构：

[1] Cent de Recherches Nucleaires, Strasbourg, Fr, Cent de Recherches Nucleaires, Strasbourg, Fr

来源：

Applied physics. A, Solids and surfaces | 1987年 / A 44卷 / 03期

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D O I：

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摘要：

引用

页码：227 / 232

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