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- [23] Closed-form physical drain current model considering energy balance equation and source resistance for deep submicron n-channel metal-oxide-semiconductor devices Ma, Shyh-Yih, 1600, JJAP, Minato-ku, Japan (33):
- [25] A simple, analytical and complete deep-submicrometer fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect-transistor model considering velocity overshoot JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3A): : 1015 - 1024