INFLUENCE OF CRYSTALLOGRAPHIC AND ELECTROPHYSICAL IMPERFECTIONS IN MONOCRYSTALLINE SILICON ON THE FORMATION OF MICROPLASMAS IN p-n JUNCTIONS.

被引：0

作者：

Magden, I.N.

Kalnev, N.A.

机构：

来源：

Electron Technology (Warsaw) | 1975年 / 8卷 / 3-4期

关键词：

Compendex;

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摘要：

SEMICONDUCTOR DEVICES

引用

页码：33 / 43

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[21] Measurement of Mean Temperature Using Several p-n Junctions.
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[22] ON THE DELINEATION OF P-N JUNCTIONS IN SILICON
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[23] MULTIPLICATION IN SILICON P-N JUNCTIONS
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[24] p-n junctions in silicon nanowires
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[25] p-n junctions in silicon nanowires
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[26] PHOTOELECTRICAL PROPERTIES OF P-N JUNCTIONS IN MONOCRYSTALLINE PBS FILMS
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[27] A REVIEW OF EFFECT OF IMPERFECTIONS ON ELECTRICAL BREAKDOWN OF P-N JUNCTIONS
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[28] A STUDY OF PROPERTIES OF SILICON P-N JUNCTIONS WITH CONTROLLED AVALANCHE FORMATION
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[29] STUDY OF THE ELECTRICAL BREAKDOWN OF DIFFUSED GALLIUM ARSENIDE p-n JUNCTIONS.
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[30] ANALYSIS OF STATIC CHARACTERISTICS AND OF PARAMETERS OF PHOTOSENSITIVE STRUCTURES WITH p-n JUNCTIONS.
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