INFLUENCE OF CRYSTALLOGRAPHIC AND ELECTROPHYSICAL IMPERFECTIONS IN MONOCRYSTALLINE SILICON ON THE FORMATION OF MICROPLASMAS IN p-n JUNCTIONS.

被引：0

作者：

Magden, I.N.

Kalnev, N.A.

机构：

来源：

Electron Technology (Warsaw) | 1975年 / 8卷 / 3-4期

关键词：

Compendex;

D O I：

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摘要：

SEMICONDUCTOR DEVICES

引用

页码：33 / 43

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[1] TEMPERATURE DEPENDENCES OF THE CHARACTERISTICS OF MICROPLASMAS IN p-n JUNCTIONS.
Isaev, M.R.
Mutalibov, Sh.R.
1600, (10):
[2] INFLUENCE OF TRAPPING LEVELS ON THE BISTABLE STATE OF MICROPLASMAS IN GERMANIUM p-n JUNCTIONS.
Palei, V.M.
Vikulin, I.M.
Savchenko, N.M.
1973, 6 (07): : 1174 - 1177
[3] MICROPLASMAS IN SILICON P-N JUNCTIONS AS DETECTORS FOR GAMMA RADIATION
RUGE, I
KEIL, G
REVIEW OF SCIENTIFIC INSTRUMENTS, 1963, 34 (04): : 390 - &
[4] MUTUAL INTERACTION BETWEEN MICROPLASMAS IN SILICON P-N JUNCTIONS
RUGE, I
KEIL, G
JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) : 3306 - &
[5] SILICON PHOTOCELLS WITH FIELD-INDUCED p-n JUNCTIONS.
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Zaks, M.B.
Kasatkin, V.V.
Skokov, Yu.V.
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[6] DETERMINATION OF POSITIONS OF MICROPLASMAS IN HIGH-VOLTAGE SILICON P-N JUNCTIONS
GREKHOV, IV
KLYUCHNI.VN
SEREZHKI.YN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (07): : 828 - +
[7] FORMATION OF BREAKDOWN IN SILICON P-N JUNCTIONS
ISAEV, MR
SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (10): : 2442 - &
[8] Light induced creation of P-N junctions.
Behl, M
Zentel, R
Broer, DJ
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2004, 227 : U453 - U453
[9] FEATURES OF THE DISSOLUTION OF SILICON UNDER CONDITIONS FOR THE ETCHING OF STRUCTURES WITH p-n JUNCTIONS.
Izidinov, S.O.
Petrin, I.
Blokhina, A.P.
Journal of applied chemistry of the USSR, 1984, 57 (2 pt 1): : 242 - 247
[10] INFLUENCE OF DEFORMATION ON PROPERTIES OF SILICON P-N JUNCTIONS
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SHKLOVSK.VV
SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (01): : 163 - +

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