共 50 条
- [31] Optical and electronic properties of GaNAs/GaAs structures. COMMAD 2000 PROCEEDINGS, 2000, : 483 - 490
- [35] Comparative investigation of recombination characteristics in proton and electron irradiated Si structures LITHUANIAN JOURNAL OF PHYSICS, 2008, 48 (02): : 137 - 144
- [36] EFFECT OF AL ISOVALENT IMPURITY ON GAAS RADIATIVE RECOMBINATION UKRAINSKII FIZICHESKII ZHURNAL, 1984, 29 (01): : 65 - 69
- [38] SPECTRAL DEPENDENCE OF RADIATIVE RECOMBINATION KINETICS IN COMPENSATED GAAS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 10 (01): : K13 - &
- [40] RADIATIVE RECOMBINATION AT REPULSIVE CENTERS IN GAAS-CU SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10): : 1709 - 1710