GAIN COEFFICIENT OF AN n-p-i-p STRUCTURE IN A COMMON BASE CIRCUIT.

The three-electrode four-layer semiconductor n** plus -p-i(p)-p device, considered in this paper and hereinafter called n-p-i structure, is of interest for application in various functional circuits. One of the basic parameters, characterizing the properties of the structure as an active element, is its gain coefficient alpha , which can exceed one when the n-p-i structure is connected into a common-base circuit because of the modulation effect of the high-resistivity base resistance. Similar effects are known in unijunction and filamentary transistors. The purpose of the present paper is to calculate the coefficient alpha as a function of certain structural and electrophysical parameters.