ELECTRICAL ACTIVATION AND LOCAL VIBRATIONAL MODE FROM Si-IMPLANTED GaAs.

被引：0

作者：

Nakamura, T. ^{[1
]}

Katoda, T. ^{[1
]}

机构：

[1] Univ of Tokyo, Inst of, Interdisciplinary Research, Tokyo,, Jpn, Univ of Tokyo, Inst of Interdisciplinary Research, Tokyo, Jpn

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| 1600年 / 57期

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[41] VOID FORMATION AND ITS EFFECT ON DOPANT DIFFUSION AND CARRIER ACTIVATION IN SI-IMPLANTED GAAS
CHEN, S
LEE, ST
BRAUNSTEIN, G
KO, KY
ZHENG, LR
TAN, TY
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (11): : L1950 - L1953
[42] DAMAGE AND LATTICE LOCATION STUDIES OF SI-IMPLANTED GAAS
BHATTACHARYA, RS
PRONKO, PP
APPLIED PHYSICS LETTERS, 1982, 40 (10) : 890 - 892
[43] Simulation of uphill diffusion behaviour of Si-implanted GaAs
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Modell Simul Mater Sci Eng, 6 (613-621):
[44] Simulation of uphill diffusion behaviour of Si-implanted GaAs
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[45] SUCCESSIVE TEM OBSERVATION OF DEFECTS IN SI-IMPLANTED GAAS
LIN, TL
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[46] EFFECT OF CR REDISTRIBUTION ON THE ELECTRICAL-PROPERTIES OF SI-IMPLANTED SEMI-INSULATING GAAS
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OKAMURA, S
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C390 - C390
[47] TEMPERATURE-DEPENDENCE OF ELECTRICAL-PROPERTIES IN SI-IMPLANTED SEMI-INSULATING GAAS
SHIGETOMI, S
MATSUMORI, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (02): : 243 - 244
[48] ELECTRICAL-PROPERTIES OF SI-IMPLANTED GATE OXIDES
KIM, J
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LO, GQ
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LEE, S
ELECTRONICS LETTERS, 1993, 29 (01) : 34 - 35
[49] Activation Mechanism for Si-implanted layer on a GaAs substrate according to P-coimplantation method
Taniguchi, T
9TH INTERNATIONAL CONFERENCE ON ADVANCED THERMAL PROCESSING OF SEMICONDUCTORS - RTP 2001, 2001, : 257 - 264
[50] RAPID THERMAL ANNEALING OF SI-IMPLANTED GAAS WITH TRIMETHYLARSENIC OVERPRESSURE
REYNOLDS, S
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