INFLUENCE OF NUCLEATION ON THE KINETICS OF BORON PRECIPITATION IN SILICON.

被引：0
|
作者：
Landi, E. [1 ]
Guimaraes, S. [1 ]
Solmi, S. [1 ]
机构：
[1] CNR - Istituto LAMEL, Via Castagnoli, 1, Bologna, I-40126, Italy
来源：
Applied physics. A, Solids and surfaces | 1987年 / A44卷 / 02期
关键词：
BORON - Precipitation - CRYSTALS - Epitaxial Growth - HEAT TREATMENT - Annealing;
D O I：
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中图分类号：
学科分类号：
摘要：
A study of the precipitation of boron implanted into pre-amorphized silicon has been carried out following several thermal processes in the temperature range between 550 and 900 degree C. It will be shown that the formation of inactive boron takes place even during a low-temperature solid-phase epitaxy of the regrowing layer, when the starting concentration level exceeds about 3. 5 multiplied by 10**2**0 atoms/cm**3. The presence, at the beginning of the annealing process, of inactive atoms in the form of small aggregates which behave as nucleation centers, markedly affects the precipitation kinetics during the thermal treatments. In these conditions the experimental data follow F. S. Ham's theory of precipitation. On the contrary, if all the dopant is incorporated in the lattice side, nucleation is the limiting factor for boron deactivation.
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页码：135 / 141
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