Notch profile defect in aluminum alloy etching using high-density plasma

被引：0
|
作者：
Tabara, Suguru [1 ]
机构：
[1] Yamaha Corp, Shizuoka, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1996年 / 35卷 / 4 B期
关键词：
Current density - Electric charge - Electrodes - Electron cyclotron resonance - Electrons - Ions - Plasma density - Plasma etching - Plasmas - Stacking faults - Structure (composition) - Titanium nitride;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An etching profile distortion called a 'notch' was observed in Al alloy etching using inductively coupled plasma and electron cyclotron resonance plasma etcher. Mechanisms of notch formation and reduction were discussed. Electron charge up and the lowered electrical potential of the specific patterns are the reasons for the notch occurrence. Notches are smaller at the Al/Ti(O)N stacked structure. A new etching method is proposed for eliminating notches and achieving high selectivity employing an ICP etcher.
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页码：2456 / 2462
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